All Transistors. 2SD2396 Datasheet

 

2SD2396 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2396

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO-220FN

2SD2396 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2396 Datasheet (PDF)

1.1. 2sd2396.pdf Size:41K _rohm

2SD2396
2SD2396

2SD2396 Transistors Transistors 2SC5060 (96-819-D351) (96-733-D416) 323

1.2. 2sd2396.pdf Size:577K _blue-rocket-elect

2SD2396
2SD2396

2SD2396(BR3DA2396F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 直流电流增益高,饱和压降低,集电极耗散功率大,,安全工作区宽。 High DC current gain),low VCE(sat),large collector power dissipation, wide SOA. 用途 / Applications 用于

 4.1. 2sd2395.pdf Size:37K _rohm

2SD2396

2SB1566 Transistors Transistors 2SD2395 (94L-459-B350) (94L-1101-D350) 296

4.2. 2sd2195 2sd1980 2sd1867 2sd2398.pdf Size:66K _rohm

2SD2396

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

 4.3. 2sd2399.pdf Size:370K _rohm

2SD2396
2SD2396

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separa

4.4. 2sd2394.pdf Size:53K _rohm

2SD2396

2SD2394 Transistors Power Transistor (60V, 3A) 2SD2394 Features External dimensions (Units : mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 10.0 4.5 3.2 2.8 ? 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emitter

 4.5. 2sd2391.pdf Size:158K _rohm

2SD2396
2SD2396

Medium Power Transistor (60V, 2A) 2SD2391 ?Features ?Dimensions (Unit : mm) 1) Low saturation voltage , typically MPT3 VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 4.5 1.5 1.6 3) Pc = 2W (on 40?40?0.7mm ceramic board). 4) Complements the 2SB1561. (1) (2) (3) 0.4 0.5 0.4 0.4 1.5 1.5 3.0 (1)Base (2)Collector (3)Emitter ?Absolute maximum rati

4.6. 2sd2390.pdf Size:25K _sanken-ele

2SD2396

C Equivalent circuit B Darlington 2SD2390 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol 2SD2390 Unit Symbol Conditions 2SD2390 Unit 0.2 4.8 0.4 15.6 VCBO 160 V ICBO VCB=160V 10

4.7. 2sd2395.pdf Size:89K _inchange_semiconductor

2SD2396
2SD2396

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2395 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS

4.8. 2sd2390.pdf Size:174K _inchange_semiconductor

2SD2396
2SD2396

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2390 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi

4.9. 2sd2399.pdf Size:83K _inchange_semiconductor

2SD2396
2SD2396

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2399 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1568 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (T

4.10. 2sd2394.pdf Size:120K _inchange_semiconductor

2SD2396
2SD2396

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2394 DESCRIPTION Ў¤ With TO-220F package Ў¤ Low collector saturation voltage Ў¤ Wide SOA (safe operating area) Ў¤ Complement to type 2SB1565 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO

4.11. 2sd2395.pdf Size:103K _blue-rocket-elect

2SD2396

2SD2395(3DA2395) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于电压调节器,电源转换器和继电器驱动及音频放大输出等线路。 Purpose: Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier. 特点: 饱和压降小,宽阔的安全工作区,与 2SB1566(3CA1566)配对。 Features: Low V ,wide SOA, complements the 2SB1566(3

4.12. st2sd2391u.pdf Size:794K _semtech

2SD2396
2SD2396

ST 2SD2391U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Peak Collector Current (PW = 10 ms) ICP 6 A 0.5 Ptot W Total Power Dissipation 2 1) Junction Temperature Tj 150 ℃ Storage Temperatu

4.13. 2sd2391.pdf Size:976K _kexin

2SD2396
2SD2396

SMD Type Transistors NPN Transistors 2SD2391 1.70 0.1 ■ Features ● Low saturation voltage ● Collector-emitter voltage =60V 0.42 0.1 ● Pc = 2W (on 40X40X0.7mm ceramic board). 0.46 0.1 ● Complements the 2SB1561. 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Volt

Datasheet: 2SD2324 , 2SD2345 , 2SD2357 , 2SD2358 , 2SD2359 , 2SD2375 , 2SD2382 , 2SD2383 , 2N5088 , 2SD2403 , 2SD2414 , 2SD2416 , 2SD2420 , 2SD2423 , 2SD2425 , 2SD2426 , 2SD2441 .

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