2SD2460 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2460
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 55 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: SC-72
Búsqueda de reemplazo de transistor bipolar 2SD2460
2SD2460 Datasheet (PDF)
2sd2460 e.pdf
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Transistor2SD2460Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 20 V1.27 1.27C
2sd2460.pdf
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Transistor2SD2460Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 20 V1.27 1.27C
2sd2461.pdf
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2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C Low saturation voltage: V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter v
2sd2462.pdf
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2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C Low saturation voltage: V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B Complementary to 2SB1602 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage
2sd2463.pdf
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DATA SHEETSILICON TRANSISTOR2SD2463NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING (UNIT: mm)chip dumper diode in collector to emitter and zener diode incollector to base. This transistor is ideal for use in acuatordrives such as motors, relays, and solenoids.FE
2sd2466.pdf
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Power Transistors2SD2466, 2SD2466ASilicon NPN epitaxial planar typeFor low-voltage switchingComplementary to 2SB1604Unit: mmFeatures4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Full-pack package with outstanding insulation, which can be in-stalled to the heat sink with one screwAbsolute Maximum Rat
2sd2467.pdf
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Power Transistors2SD2467Silicon NPN epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi
2sd2465.pdf
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Power Transistors2SD2465, 2SD2465ASilicon NPN epitaxial planar typeFor low-voltage switchingComplementary to 2SB1603Unit: mmFeatures4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package superior in insulation, which can be installedto the heat sink with one screwAbsolute Maximum Ratings (T
2sd2468.pdf
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Power Transistors2SD2468Silicon NPN epitaxial planar typeFor power switchingUnit: mm4.6 0.29.9 0.3 2.9 0.2Features 3.2 0.1Low collector to emitter saturation voltage VCE(sat)Satisfactory linearity of foward current transfer ratio hFELarge collector current ICFull-pack package with outstanding insulation, which can be in-2.6 0.1stalled to the heat sink wi
2sd2469.pdf
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Power Transistors2SD2469, 2SD2469ASilicon NPN epitaxial planar typeFor power switchingComplementary to 2SB1607Unit: mmFeatures 4.6 0.2 Low collector to emitter saturation voltage VCE(sat)9.9 0.3 2.9 0.2 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in-
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .