2SD2598 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2598
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 4000
Paquete / Cubierta: MT2
Búsqueda de reemplazo de transistor bipolar 2SD2598
2SD2598 Datasheet (PDF)
2sd2598.pdf
Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist
2sd2598 e.pdf
Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist
2sd2599.pdf
2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 8 V (Max.) CE (sat) High Speed : t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL
2sd2593.pdf
isc Silicon NPN Power Transistor 2SD2593DESCRIPTIONLow Collector Saturation Voltage-: V = 1.2 (Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60
2sd2599.pdf
isc Silicon NPN Power Transistor 2SD2599DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
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