2SD2598 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2598
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: MT2
2SD2598 Transistor Equivalent Substitute - Cross-Reference Search
2SD2598 Datasheet (PDF)
2sd2598.pdf
Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist
2sd2598 e.pdf
Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist
2sd2599.pdf
2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 8 V (Max.) CE (sat) High Speed : t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL
2sd2593.pdf
isc Silicon NPN Power Transistor 2SD2593DESCRIPTIONLow Collector Saturation Voltage-: V = 1.2 (Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60
2sd2599.pdf
isc Silicon NPN Power Transistor 2SD2599DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD2695
