2SD2611 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2611TransistorsPower Transistor (80V, 7A)2SD2611 Features1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A.2) Excellent DC current gain characteristics.3) Pc = 30W (Tc = 25C)4) Wide SOA (safe operating area).5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 100 VCollecto

2SD2614TransistorsMedium Power Transistor(Motor, Relay drive)(6010V, 5A)2SD2614 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to10.0 4.5 "L" loads.3.2 2.8 3) Built-in resistor between base and emitter.4) Built-in damper diode.1.21.30.80.75 ( )2.54 2.54 2.6 (1)

2SD2618TransistorsPower Transistor (80V, 4A)2SD2618 Features Circuit diagram1) Darlington connection for a high hFE.C2) Built-in resistor between base and emitter.3) Built-in damper doide.4) Complements the 2SB1676.BR 300RB : BaseC : CollectorEE : Emitter Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 80 VC

2SD2615TransistorsPower Transistor (120V, 6A)2SD2615 Features Circuit diagram1) Darlington connection for high DC current gain.C2) Built-in resistor between base and emitter.3) Built-in damper diode.4) Complements the 2SB1674. BR1 R2ER1 5.0k B : BaseC : CollectorR2 300E : Emitter Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector

2SD2616TransisitorsPower Transistor (100V, 5A)2SD2616 Features1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A.2) Excellent hFE current characteristics.3) Pc=30W. (Tc=25C) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 100 VCollector-emitter voltage VCEO 100 VEmitter-base voltage VEBO 5 V5 A(DC)C

Transistors2SD261