2SD2645 Todos los transistores

 ..1. Size:29K  sanyo
 2sd2645.pdf

Ordering number ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2645] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

 ..2. Size:214K  inchange semiconductor
 2sd2645.pdf

isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:29K  sanyo
 2sd2649.pdf

Ordering number ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2649] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

 8.2. Size:29K  sanyo
 2sd2646.pdf

Ordering number ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2646] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

 8.3. Size:28K  sanyo
 2sd2648.pdf

Ordering number ENN6923 2SD2648 NPN Triple Diffused Planar Silicon Transistor 2SD2648 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2648] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

 8.4. Size:27K  sanken-ele
 2sd2643.pdf

C Equivalent circuit B Darlington 2SD2643 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

 8.5. Size:28K  sanken-ele
 2sd2642.pdf

C Equivalent circuit B Darlington 2SD2642 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB

 8.6. Size:28K  sanken-ele
 2sd2641.pdf

Equivalent circuit C B Darlington 2SD2641 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Symbol Ratings Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB

 8.7. Size:214K  inchange semiconductor
 2sd2642.pdf

isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1687 Minimum Lot-to-Lot variations for robust device performance and reliable op