2SD2645 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD2645
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO-3PMLH
2SD2645 Transistor Equivalent Substitute - Cross-Reference Search
2SD2645 Datasheet (PDF)
2sd2645.pdf
Ordering number : ENN6897A2SD2645NPN Triple Diffused Planar Silicon Transistor2SD2645Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2645] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.
2sd2645.pdf
isc Silicon NPN Power Transistor 2SD2645DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sd2649.pdf
Ordering number : ENN6679A2SD2649NPN Triple Diffused Planar Silicon Transistor2SD2649Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2649] Adoption of MBIT process. 5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas
2sd2646.pdf
Ordering number : ENN69222SD2646NPN Triple Diffused Planar Silicon Transistor2SD2646Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2646] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas
2sd2648.pdf
Ordering number : ENN69232SD2648NPN Triple Diffused Planar Silicon Transistor2SD2648Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2648] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas
2sd2643.pdf
CEquivalent circuitBDarlington 2SD2643(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO
2sd2642.pdf
CEquivalent circuitBDarlington 2SD2642(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c0.5VCBO 110 ICB
2sd2641.pdf
Equivalent circuitCBDarlington 2SD2641(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)RatingsSymbol Ratings Symbol Conditions UnitUnit0.24.80.415.6100max AVCB
2sd2642.pdf
isc Silicon NPN Darlington Power Transistor 2SD2642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1687Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
