2SD2649 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2649
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO-3PMLH
Búsqueda de reemplazo de transistor bipolar 2SD2649
2SD2649 Datasheet (PDF)
2sd2649.pdf
Ordering number : ENN6679A2SD2649NPN Triple Diffused Planar Silicon Transistor2SD2649Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2649] Adoption of MBIT process. 5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas
2sd2646.pdf
Ordering number : ENN69222SD2646NPN Triple Diffused Planar Silicon Transistor2SD2646Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2646] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas
2sd2645.pdf
Ordering number : ENN6897A2SD2645NPN Triple Diffused Planar Silicon Transistor2SD2645Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD2645] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.
2sd2648.pdf
Ordering number : ENN69232SD2648NPN Triple Diffused Planar Silicon Transistor2SD2648Color TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SD2648] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 : Bas
2sd2643.pdf
CEquivalent circuitBDarlington 2SD2643(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)Application : Audio, Series Regulator and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO
2sd2642.pdf
CEquivalent circuitBDarlington 2SD2642(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c0.5VCBO 110 ICB
2sd2641.pdf
Equivalent circuitCBDarlington 2SD2641(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)RatingsSymbol Ratings Symbol Conditions UnitUnit0.24.80.415.6100max AVCB
2sd2642.pdf
isc Silicon NPN Darlington Power Transistor 2SD2642DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 5A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 5A, I = 5mA)CE(sat) C BComplement to Type 2SB1687Minimum Lot-to-Lot variations for robust deviceperformance and reliable op
2sd2645.pdf
isc Silicon NPN Power Transistor 2SD2645DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BFS15F | 2N1648
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050