2SD2679 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2679

Código: XZ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 280 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: MPT3

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2SD2679 datasheet

 ..1. Size:116K  rohm
2sd2679.pdf pdf_icon

2SD2679

2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XZ NPN epitaxial planar silicon transistor

 8.1. Size:59K  rohm
2sd2670.pdf pdf_icon

2SD2679

2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) max.250mV 0.95 0.95 0.16 At lc=1.5A / lB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Abso

 8.2. Size:66K  rohm
2sd2671.pdf pdf_icon

2SD2679

2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) max. 370mV (1) (2) 0.95 0.95 At lc=1.5A / lB=75mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maxi

 8.3. Size:76K  rohm
2sd2678.pdf pdf_icon

2SD2679

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XX NPN epitaxial planar silicon transistor

Otros transistores... 2SD2646, 2SD2648, 2SD2649, 2SD2650, 2SD2651, 2SD2659, 2SD2663, 2SD2678, BC327, 2SD2687S, 2SD2688LS, 2SD2689LS, CBSL100, NESG2101M05, NESG2101M16, NESG210719, NESG2107M33