NESG210719 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETNPN SILICON GERMANIUM RF TRANSISTORNESG210719NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES The device is an ideal choice for OSC, low noise, high-gain amplification High breakdown voltage technology for SiGe Tr. 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Par

PRELIMINARY DATA SHEETNEC's NPN SILICON TRANSISTOR NESG2107M33FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGEORDERING INFORMATIONPART NUMBER QUANTITY SUPPLYING FORMNESG2107M33-A 50 pcs (Non reel) 8 mm wide embossed tapingNESG2107M33-T3-A 10 kpcs

NPN SILICON GERMANIUM RF TRANSISTORNESG2101M16NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz

NEC's NPN SiGe NESG2101M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat