NESG210719 Specs and Replacement

Type Designator: NESG210719

SMD Transistor Code: D7

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 5 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7000 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: SUPER-MINIMOLD

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NESG210719 datasheet

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 nesg210719.pdf pdf_icon

NESG210719

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES The device is an ideal choice for OSC, low noise, high-gain amplification High breakdown voltage technology for SiGe Tr. 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Par... See More ⇒

 6.1. Size:302K  nec

 nesg2107m33.pdf pdf_icon

NESG210719

PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NESG2107M33-A 50 pcs (Non reel) 8 mm wide embossed taping NESG2107M33-T3-A 10 kpcs... See More ⇒

 7.1. Size:234K  nec

 nesg2101m16.pdf pdf_icon

NESG210719

NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high- gain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz ... See More ⇒

 7.2. Size:575K  nec

 nesg2101m05.pdf pdf_icon

NESG210719

NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE NF = 0.9 dB at 2 GHz HIGH MAXIMUM STABLE POWER GAIN MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE M05 SOT-343 footprint, with a height of only 0.59 mm Flat ... See More ⇒

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Detailed specifications: 2SD2678, 2SD2679, 2SD2687S, 2SD2688LS, 2SD2689LS, CBSL100, NESG2101M05, NESG2101M16, A940, NESG2107M33, NESG250134, NESG260234, NESG270034, NESG3031M05, NESG3031M14, NESG3032M14, NESG3033M14

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