NESG2030M04 Todos los transistores

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 nesg2030m04.pdf

NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES SiGe TECHNOLOGY fT = 60 GHz Process LOW NOISE FIGURE NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTION NEC's NESG2030M04 is fabric

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 nesg2031m05.pdf

NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE SOT-343 footprint, with a height of only 0.59 mm Flat lead st

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 nesg2031m16.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG2031M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz

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 nesg204619.pdf

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG204619 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V 3-PIN SUPER MINIMOLD (19) PACKAGE ORD

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 nesg2021m16.pdf

NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

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 nesg2046m33.pdf

PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS VCEO (absolute maximum ratings) = 5.0 V 3-PIN SUPER LEAD-LESS MINIMOLD (

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 nesg2021m05.pdf

DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b