Биполярный транзистор NESG2030M04 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: NESG2030M04
Маркировка: T16
Тип материала: SiGe
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.08 W
Макcимально допустимое напряжение коллектор-база (Ucb): 8 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 2.3 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1.2 V
Макcимальный постоянный ток коллектора (Ic): 0.035 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 60000 MHz
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: M04 SOT343
Аналоги (замена) для NESG2030M04
NESG2030M04 Datasheet (PDF)
nesg2030m04.pdf
NPN SiGe RF TRANSISTORNESG2030M04NPN SiGe HIGH FREQUENCY TRANSISTORFEATURES SiGe TECHNOLOGY:fT = 60 GHz Process LOW NOISE FIGURE:NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN:MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE:SOT-343 footprint, with a height of only 0.59 mmFlat lead style for better RF performanceM04DESCRIPTIONNEC's NESG2030M04 is fabric
nesg2031m05.pdf
NPN SiGe RF TRANSISTORNESG2031M05NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead st
nesg2031m16.pdf
NPN SILICON GERMANIUM RF TRANSISTORNESG2031M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
nesg204619.pdf
PRELIMINARY DATA SHEETNEC's NPN SiGe TRANSISTORNESG204619FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V 3-PIN SUPER MINIMOLD (19) PACKAGEORD
nesg2021m16.pdf
NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f
nesg2046m33.pdf
PRELIMINARY DATA SHEETNEC's NPN SiGe TRANSISTORNESG2046M33FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V 3-PIN SUPER LEAD-LESS MINIMOLD (
nesg2021m05.pdf
DATA SHEETNEC's NPN SiGe NESG2021M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050