2N4910X Todos los transistores

2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS SCREENING OPTIONS AVAILABE 1 2 TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO 66 Metal Package. PIN 1 =

2N4910XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

2N4910XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=