FJN4302R Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJN4302R
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 0.5 kOhm
Ratio típica de resistencia R1/R2 = 20
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO-92
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FJN4302R datasheet
fjn4302r.pdf
FJN4302R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K , R2=10K ) Complement to FJN3302R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC
fjn4305r.pdf
FJN4305R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to FJN3305R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C V
fjn4303r.pdf
FJN4303R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K , R2=22K ) Complement to FJN3303R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC
fjn4306r.pdf
FJN4306R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K , R2=47K ) Complement to FJN3306R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC
Otros transistores... FJN3309R, FJN3310R, FJN3311R, FJN3312R, FJN3313R, FJN3314R, FJN3315R, FJN4301R, S8050, FJN4303R, FJN4304R, FJN4305R, FJN4306R, FJN4307R, FJN4308R, FJN4309R, FJN4310R
History: FJN4306R | FJN4303R | FJN4304R | 3DD103
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