FJNS3208R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJNS3208R
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: TO-92S
Búsqueda de reemplazo de transistor bipolar FJNS3208R
FJNS3208R Datasheet (PDF)
fjns3208r.pdf
FJNS3208RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K, R2=22K) Complement to FJNS4208RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns3201r.pdf
FJNS3201RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJNS4201RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns3204r.pdf
FJNS3204RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K, R2=47K) Complement to FJNS4204RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCV
fjns3205r.pdf
FJNS3205RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJNS4205RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitCSymbol Parameter Value Units
fjns3202r.pdf
FJNS3202RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to FJNS4202RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsCV
fjns3207r.pdf
FJNS3207RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=47K) Complement to FJNS4207RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value UnitsC
fjns3203r.pdf
FJNS3203RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K, R2=22K) Complement to FJNS4203RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitSymbol Parameter Value Units CVC
fjns3206r.pdf
FJNS3206RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=47K) Complement to FJNS4206RTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Equivalent CircuitCSymbol Parameter Value Units
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
