FJV3102R Todos los transistores

 

FJV3102R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJV3102R
   Código: R22
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-23
 

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FJV3102R Datasheet (PDF)

 ..1. Size:56K  fairchild semi
 fjv3102r.pdf pdf_icon

FJV3102R

FJV3102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV4102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R22BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.1. Size:55K  fairchild semi
 fjv3108r.pdf pdf_icon

FJV3102R

FJV3108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R28BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.2. Size:84K  fairchild semi
 fjv3104r.pdf pdf_icon

FJV3102R

FJV3104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit,3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV4104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R24BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

 8.3. Size:88K  fairchild semi
 fjv3105r.pdf pdf_icon

FJV3102R

FJV3105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV4105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R25BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1981 | 2SA473O | FJV992 | ECG193 | 2SA271 | 2SC3255 | TD366C

 

 
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