Биполярный транзистор FJV3102R
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: FJV3102R
Маркировка: R22
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 10 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Ёмкость коллекторного перехода (Cc): 3.7
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
SOT-23
Аналоги (замена) для FJV3102R
FJV3102R
Datasheet (PDF)
..1. Size:56K fairchild semi
fjv3102r.pdf 
FJV3102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV4102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R22BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.1. Size:55K fairchild semi
fjv3108r.pdf 
FJV3108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV4108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R28BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.2. Size:84K fairchild semi
fjv3104r.pdf 
FJV3104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit,3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV4104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R24BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.3. Size:88K fairchild semi
fjv3105r.pdf 
FJV3105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV4105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R25BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note
8.4. Size:89K fairchild semi
fjv3106r.pdf 
FJV3106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV4106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R26BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.5. Size:56K fairchild semi
fjv3107r.pdf 
FJV3107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV4107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R27BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note
8.6. Size:55K fairchild semi
fjv3101r.pdf 
FJV3101RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJV4101R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R21BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no
8.7. Size:56K fairchild semi
fjv3103r.pdf 
FJV3103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV4103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R23BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted
8.8. Size:52K fairchild semi
fjv3109r.pdf 
FJV3109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K) Complement to FJV4109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR29RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
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