FJV3109R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJV3109R

Código: R29

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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FJV3109R datasheet

 ..1. Size:52K  fairchild semi
 fjv3109r.pdf pdf_icon

FJV3109R

FJV3109R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K ) Complement to FJV4109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R29 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet

 8.1. Size:55K  fairchild semi
 fjv3108r.pdf pdf_icon

FJV3109R

FJV3108R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K , R2=22K ) Complement to FJV4108R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R28 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted

 8.2. Size:84K  fairchild semi
 fjv3104r.pdf pdf_icon

FJV3109R

FJV3104R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, 3 Built in bias Resistor (R1=47K , R2=47K ) Complement to FJV4104R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R24 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted

 8.3. Size:56K  fairchild semi
 fjv3102r.pdf pdf_icon

FJV3109R

FJV3102R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K , R2=10K ) Complement to FJV4102R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R22 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted

MOSTRAR MÁS

Otros transistores... FJV3101R, FJV3102R, FJV3103R, FJV3104R, FJV3105R, FJV3106R, FJV3107R, FJV3108R, D965, FJV3110R, FJV3111R, FJV3112R, FJV3113R, FJV3114R, FJV3115R, FJV4101R, FJV4102R