FJV3109R Specs and Replacement
Type Designator: FJV3109R
SMD Transistor Code: R29
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3.7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23
FJV3109R Substitution
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FJV3109R datasheet
FJV3109R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=4.7K ) Complement to FJV4109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R29 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet... See More ⇒
FJV3108R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=47K , R2=22K ) Complement to FJV4108R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R28 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted... See More ⇒
FJV3104R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, 3 Built in bias Resistor (R1=47K , R2=47K ) Complement to FJV4104R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R24 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted... See More ⇒
FJV3102R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K , R2=10K ) Complement to FJV4102R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R22 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted... See More ⇒
Detailed specifications: FJV3101R, FJV3102R, FJV3103R, FJV3104R, FJV3105R, FJV3106R, FJV3107R, FJV3108R, D965, FJV3110R, FJV3111R, FJV3112R, FJV3113R, FJV3114R, FJV3115R, FJV4101R, FJV4102R
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