FJV3113R Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJV3113R
Código: R33
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hFE): 68
Encapsulados: SOT-23
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FJV3113R datasheet
fjv3113r.pdf
FJV3113R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to FJV4113R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R33 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise not
fjv3111r.pdf
FJV3111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to FJV4111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R31 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete
fjv3115r.pdf
FJV3115R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=10K ) 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R35 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value U
fjv3110r.pdf
FJV3110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV4110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R30 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramet
Otros transistores... FJV3105R, FJV3106R, FJV3107R, FJV3108R, FJV3109R, FJV3110R, FJV3111R, FJV3112R, 2SC2240, FJV3114R, FJV3115R, FJV4101R, FJV4102R, FJV4103R, FJV4104R, FJV4105R, FJV4106R
History: 8050SS-C | TEC9014
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