FJV3113R Datasheet, Equivalent, Cross Reference Search
Type Designator: FJV3113R
SMD Transistor Code: R33
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3.7
pF
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: SOT-23
FJV3113R Transistor Equivalent Substitute - Cross-Reference Search
FJV3113R Datasheet (PDF)
fjv3113r.pdf
FJV3113RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJV4113R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R33BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not
fjv3111r.pdf
FJV3111RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K) Complement to FJV4111R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR31RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete
fjv3115r.pdf
FJV3115RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K, R2=10K)2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R35BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value U
fjv3110r.pdf
FJV3110RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=10K) Complement to FJV4110R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR30RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjv3112r.pdf
FJV3112RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=47K) Complement to FJV4112R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR32RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet
fjv3114r.pdf
November 2006FJV3114RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=47K) Complement to FJV4114REqivalent CircuitC3R34 2BESOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value Units
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KRA316
