2N6318 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6318
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO66
2N6318 Datasheet (PDF)
2n6317 2n6318.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6317 2N6318 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6315/6316 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 Collecto
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n6312 2n6313 2n6314.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorA
Otros transistores... 2N631 , 2N6310 , 2N6311 , 2N6312 , 2N6313 , 2N6314 , 2N6315 , 2N6317 , 2N2907 , 2N6319 , 2N632 , 2N6320 , 2N6321 , 2N6322 , 2N6323 , 2N6324 , 2N6325 .
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