2N6318 Datasheet and Replacement
Type Designator: 2N6318
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
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2N6318 Datasheet (PDF)
2n6317 2n6318.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6317 2N6318 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2N6315/6316 APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 Collecto
2n6312 2n6313 2n6314 2n4231a 2n4232a 2n4233a.pdf

ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n6312 2n6313 2n6314.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6312 2N6313 2N6314 DESCRIPTION With TO-66 package Low collector saturation voltage Low leakage current APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1475 | 2SC3083 | BT2944 | CTP3551 | 2N5811 | BCW64 | DT400-500
Keywords - 2N6318 transistor datasheet
2N6318 cross reference
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History: 2SA1475 | 2SC3083 | BT2944 | CTP3551 | 2N5811 | BCW64 | DT400-500



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