FJV4108R Todos los transistores

 

FJV4108R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJV4108R
   Código: R78
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 5.5 pF
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT-23
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FJV4108R Datasheet (PDF)

 ..1. Size:55K  fairchild semi
 fjv4108r.pdf pdf_icon

FJV4108R

FJV4108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV3108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR78R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.1. Size:52K  fairchild semi
 fjv4109r.pdf pdf_icon

FJV4108R

FJV4109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to FJV3109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR79RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

 8.2. Size:56K  fairchild semi
 fjv4107r.pdf pdf_icon

FJV4108R

FJV4107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV3107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R77BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.3. Size:56K  fairchild semi
 fjv4103r.pdf pdf_icon

FJV4108R

FJV4103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV3103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR73R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2G138 | MBT3904DW1T3G | RT1P14HM | 2SD883A | 2N264 | 2SB945

 

 
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