FJV4108RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=22K) Complement to FJV3108R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR78R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

FJV4109RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to FJV3109R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR79RBPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parame

FJV4107RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to FJV3107R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R77BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

FJV4103RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=22K, R2=22K) Complement to FJV3103R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR73R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

FJV4106RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=10K, R2=47K) Complement to FJV3106R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R76BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

FJV4102RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=10K, R2=10K) Complement to FJV3102R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR72R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted

FJV4105RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to FJV3105R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitMarkingCR1R75BR2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise not

FJV4104RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=47K) Complement to FJV3104R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR74R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise note

FJV4101RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=4.7K) Complement to FJV3101R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR71R2PNP Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise no