FJV4113R Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJV4113R
Código: R83
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hFE): 68
Encapsulados: SOT-23
Búsqueda de reemplazo de FJV4113R
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FJV4113R datasheet
fjv4113r.pdf
FJV4113R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJV3113R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R83 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise note
fjv4112r.pdf
FJV4112R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=47K ) Complement to FJV3112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R82 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete
fjv4111r.pdf
FJV4111R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to FJV3111R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R81 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete
fjv4110r.pdf
FJV4110R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=10K ) Complement to FJV3110R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R80 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete
Otros transistores... FJV4105R, FJV4106R, FJV4107R, FJV4108R, FJV4109R, FJV4110R, FJV4111R, FJV4112R, D882P, FJV4114R, FJV42MTF, FJV992, FJX1182, FJX2222A, FJX2907A, FJX3001R, FJX3002R
History: MMBTA64L
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