FJV4114R Todos los transistores

 

FJV4114R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJV4114R
   Código: R84
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 5.5 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-23
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FJV4114R Datasheet (PDF)

 ..1. Size:46K  fairchild semi
 fjv4114r.pdf pdf_icon

FJV4114R

FJV4114RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJV3114R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR84R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

 8.1. Size:45K  fairchild semi
 fjv4112r.pdf pdf_icon

FJV4114R

FJV4112RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=47K) Complement to FJV3112R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR82 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.2. Size:45K  fairchild semi
 fjv4111r.pdf pdf_icon

FJV4114R

FJV4111RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=22K) Complement to FJV3111R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingRR81 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.3. Size:46K  fairchild semi
 fjv4113r.pdf pdf_icon

FJV4114R

FJV4113RSwitching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJV3113R2SOT-2311. Base 2. Emitter 3. Collector Equivalent CircuitCMarkingR1BR83R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DTS520MX | TD13005SMD | BC237BP | MP1557 | DC5422 | GI2716 | CS4193

 

 
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