2N632
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N632
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.17
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 18
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 95
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2N632
2N632
Datasheet (PDF)
0.1. Size:150K jmnic
2n6326 2n6327 2n6328.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(
0.4. Size:183K inchange semiconductor
2n6322.pdf
isc Silicon NPN Power Transistor 2N6322DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high-speed switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
0.5. Size:117K inchange semiconductor
2n6326 2n6327 2n6328.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute
0.6. Size:219K inchange semiconductor
2n6329.pdf
isc Silicon PNP Power Transistor 2N6329DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.