2N632 Todos los transistores

 0.1. Size:150K  jmnic
 2n6326 2n6327 2n6328.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(

 0.2. Size:22K  microsemi
 2n6328.pdf

 0.3. Size:21K  microsemi
 2n6329.pdf

 0.4. Size:183K  inchange semiconductor
 2n6322.pdf

isc Silicon NPN Power Transistor 2N6322 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 0.5. Size:117K  inchange semiconductor
 2n6326 2n6327 2n6328.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

 0.6. Size:219K  inchange semiconductor
 2n6329.pdf

isc Silicon PNP Power Transistor 2N6329 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-60V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -6