All Transistors. 2N632 Datasheet

 

2N632 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N632
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.17 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 95 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO5

 2N632 Transistor Equivalent Substitute - Cross-Reference Search

   

2N632 Datasheet (PDF)

 0.1. Size:150K  jmnic
2n6326 2n6327 2n6328.pdf

2N632
2N632

JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(

 0.2. Size:22K  microsemi
2n6328.pdf

2N632

 0.3. Size:21K  microsemi
2n6329.pdf

2N632

 0.4. Size:183K  inchange semiconductor
2n6322.pdf

2N632
2N632

isc Silicon NPN Power Transistor 2N6322DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high-speed switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 0.5. Size:117K  inchange semiconductor
2n6326 2n6327 2n6328.pdf

2N632
2N632

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute

 0.6. Size:219K  inchange semiconductor
2n6329.pdf

2N632
2N632

isc Silicon PNP Power Transistor 2N6329DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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