2N632 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N632 Specs and Replacement

Type Designator: 2N632

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.17 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 95 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO5

2N632 Substitution

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2N632 datasheet

0.1. Size:150K jmnic

2n6326 2n6327 2n6328.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒

0.2. Size:22K microsemi

2n6328.pdf pdf_icon

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0.3. Size:21K microsemi

2n6329.pdf pdf_icon

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0.4. Size:183K inchange semiconductor

2n6322.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6322 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒