2N6320
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6320
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 300
W
Tensión colector-base (Vcb): 140
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 80
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 1000
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N6320
2N6320
Datasheet (PDF)
9.1. Size:150K jmnic
2n6326 2n6327 2n6328.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(
9.4. Size:183K inchange semiconductor
2n6322.pdf
isc Silicon NPN Power Transistor 2N6322DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high-speed switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.5. Size:117K inchange semiconductor
2n6326 2n6327 2n6328.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute
9.6. Size:219K inchange semiconductor
2n6329.pdf
isc Silicon PNP Power Transistor 2N6329DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6
Otros transistores... 2N6312
, 2N6313
, 2N6314
, 2N6315
, 2N6317
, 2N6318
, 2N6319
, 2N632
, 2SC5200
, 2N6321
, 2N6322
, 2N6323
, 2N6324
, 2N6325
, 2N6326
, 2N6327
, 2N6328
.