FJX3012R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FJX3012R
   Código: S12
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-323

Búsqueda de reemplazo de transistor bipolar FJX3012R

FJX3012R Datasheet (PDF)

..1. Size:32K fairchild semi
fjx3012r.pdf

FJX3012RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJX4012R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS12RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

8.1. Size:33K fairchild semi
fjx3013r.pdf

FJX3013RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJX4013R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S13BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

8.2. Size:32K fairchild semi
fjx3011r.pdf

FJX3011RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJX4011R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS11RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

8.3. Size:38K fairchild semi
fjx3010r.pdf

FJX3010RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJX4010R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS10RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

8.4. Size:42K fairchild semi
fjx3015r.pdf

FJX3015RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=10K)21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S15BR2NPN Epitaxial Silicon Transistor EAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value

8.5. Size:34K fairchild semi
fjx3014r.pdf

FJX3014RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJX4014R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S14BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FJNS3213R

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Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D