FJX3014R Todos los transistores

 

FJX3014R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJX3014R
   Código: S14
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-323
 

 Búsqueda de reemplazo de FJX3014R

   - Selección ⓘ de transistores por parámetros

 

FJX3014R Datasheet (PDF)

 ..1. Size:34K  fairchild semi
 fjx3014r.pdf pdf_icon

FJX3014R

FJX3014RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJX4014R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S14BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

 8.1. Size:33K  fairchild semi
 fjx3013r.pdf pdf_icon

FJX3014R

FJX3013RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =2.2K, R2=47K) Complement to FJX4013R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCR1S13BR2NPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

 8.2. Size:32K  fairchild semi
 fjx3011r.pdf pdf_icon

FJX3014R

FJX3011RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJX4011R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS11RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

 8.3. Size:38K  fairchild semi
 fjx3010r.pdf pdf_icon

FJX3014R

FJX3010RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJX4010R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitMarkingCS10RBNPN Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramet

MOSTRAR MÁS

Otros transistores... FJX3006R , FJX3007R , FJX3008R , FJX3009R , FJX3010R , FJX3011R , FJX3012R , FJX3013R , 2N3904 , FJX3015R , FJX3904 , FJX3906 , FJX4001R , FJX4002R , FJX4003R , FJX4004R , FJX4005R .

 

 
Back to Top

 


 
.