FJX4013R Todos los transistores

 

FJX4013R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJX4013R
   Código: S63
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 5.5 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-323
 

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FJX4013R Datasheet (PDF)

 ..1. Size:33K  fairchild semi
fjx4013r.pdf pdf_icon

FJX4013R

FJX4013RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJX3013R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS63R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise note

 8.1. Size:32K  fairchild semi
fjx4011r.pdf pdf_icon

FJX4013R

FJX4011RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJX3011R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRS61 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.2. Size:39K  fairchild semi
fjx4010r.pdf pdf_icon

FJX4013R

FJX4010RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJX3010R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRS60 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Paramete

 8.3. Size:33K  fairchild semi
fjx4014r.pdf pdf_icon

FJX4013R

FJX4014RSwitching Application (Bias Resistor Built In)3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K, R2=47K) Complement to FJX3014R21SOT-3231. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BS64R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise not

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History: 2SD1639 | 2SC2611 | MMBT4403W | 2N925

 

 
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