FJX4014R Todos los transistores

 

FJX4014R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJX4014R
   Código: S64
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 5.5 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar FJX4014R

 

FJX4014R Datasheet (PDF)

 ..1. Size:33K  fairchild semi
 fjx4014r.pdf pdf_icon

FJX4014R

FJX4014R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1 =4.7K , R2=47K ) Complement to FJX3014R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B S64 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise not

 8.1. Size:32K  fairchild semi
 fjx4011r.pdf pdf_icon

FJX4014R

FJX4011R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K ) Complement to FJX3011R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R S61 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

 8.2. Size:39K  fairchild semi
 fjx4010r.pdf pdf_icon

FJX4014R

FJX4010R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJX3010R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R S60 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

 8.3. Size:32K  fairchild semi
 fjx4012r.pdf pdf_icon

FJX4014R

FJX4012R Switching Application (Bias Resistor Built In) 3 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K ) Complement to FJX3012R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R R62 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Paramete

MOSTRAR MÁS

Otros transistores... FJX4006R , FJX4007R , FJX4008R , FJX4009R , FJX4010R , FJX4011R , FJX4012R , FJX4013R , TIP31C , FJX733 , 2SB1334A , FJY3001R , FJY3002R , FJY3003R , FJY3004R , FJY3005R , FJY3006R .

History: 2SB92

 

 
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