FJY3014R Todos los transistores

 

FJY3014R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJY3014R
   Código: S14
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3.7 pF
   Ganancia de corriente contínua (hfe): 68
   Paquete / Cubierta: SOT-523F
 

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FJY3014R Datasheet (PDF)

 ..1. Size:254K  fairchild semi
 fjy3014r.pdf pdf_icon

FJY3014R

July 2007FJY3014RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=47K) Complement to FJY4014REquivalent CircuitC CS14 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

 8.1. Size:243K  fairchild semi
 fjy3010r.pdf pdf_icon

FJY3014R

July 2007FJY3010RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJY4010REquivalent CircuitC CS10 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collecto

 8.2. Size:252K  fairchild semi
 fjy3013r.pdf pdf_icon

FJY3014R

July 2007FJY3013RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJY4013REquivalent CircuitC CS13 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V

 8.3. Size:244K  fairchild semi
 fjy3011r.pdf pdf_icon

FJY3014R

July 2007FJY3011RtmNPN Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJY4011REquivalent CircuitC CS11 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collecto

MOSTRAR MÁS

Otros transistores... FJY3006R , FJY3007R , FJY3008R , FJY3009R , FJY3010R , FJY3011R , FJY3012R , FJY3013R , BC546 , FJY3015R , FJY4001R , FJY4002R , FJY4003R , FJY4004R , FJY4005R , FJY4006R , FJY4007R .

History: RT2N22M | DT1522 | GT8004 | BFR28

 

 
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