FJY3014R Specs and Replacement

Type Designator: FJY3014R

SMD Transistor Code: S14

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 68

Noise Figure, dB: -

Package: SOT-523F

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FJY3014R datasheet

 ..1. Size:254K  fairchild semi

 fjy3014r.pdf pdf_icon

FJY3014R

July 2007 FJY3014R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=47K ) Complement to FJY4014R Equivalent Circuit C C S14 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V ... See More ⇒

 8.1. Size:243K  fairchild semi

 fjy3010r.pdf pdf_icon

FJY3014R

July 2007 FJY3010R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJY4010R Equivalent Circuit C C S10 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collecto... See More ⇒

 8.2. Size:252K  fairchild semi

 fjy3013r.pdf pdf_icon

FJY3014R

July 2007 FJY3013R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJY4013R Equivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V ... See More ⇒

 8.3. Size:244K  fairchild semi

 fjy3011r.pdf pdf_icon

FJY3014R

July 2007 FJY3011R tm NPN Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K ) Complement to FJY4011R Equivalent Circuit C C S11 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collecto... See More ⇒

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Detailed specifications: FJY3006R, FJY3007R, FJY3008R, FJY3009R, FJY3010R, FJY3011R, FJY3012R, FJY3013R, 2SA1837, FJY3015R, FJY4001R, FJY4002R, FJY4003R, FJY4004R, FJY4005R, FJY4006R, FJY4007R

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