2N6324 Todos los transistores

 

2N6324 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6324
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 300 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO61

 Búsqueda de reemplazo de transistor bipolar 2N6324

 

2N6324 Datasheet (PDF)

 9.1. Size:150K  jmnic
2n6326 2n6327 2n6328.pdf

2N6324
2N6324

JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(

 9.2. Size:22K  microsemi
2n6328.pdf

2N6324

 9.3. Size:21K  microsemi
2n6329.pdf

2N6324

 9.4. Size:183K  inchange semiconductor
2n6322.pdf

2N6324
2N6324

isc Silicon NPN Power Transistor 2N6322DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high-speed switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.5. Size:117K  inchange semiconductor
2n6326 2n6327 2n6328.pdf

2N6324
2N6324

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute

 9.6. Size:219K  inchange semiconductor
2n6329.pdf

2N6324
2N6324

isc Silicon PNP Power Transistor 2N6329DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -6

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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