2N6324 Datasheet. Specs and Replacement

Type Designator: 2N6324  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO61

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2N6324 datasheet

 9.1. Size:150K  jmnic

 2n6326 2n6327 2n6328.pdf pdf_icon

2N6324

JMnic Product Specification Silicon NPN Power Transistors 2N6326 2N6327 2N6328 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(... See More ⇒

 9.2. Size:22K  microsemi

 2n6328.pdf pdf_icon

2N6324

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 9.3. Size:21K  microsemi

 2n6329.pdf pdf_icon

2N6324

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 9.4. Size:183K  inchange semiconductor

 2n6322.pdf pdf_icon

2N6324

isc Silicon NPN Power Transistor 2N6322 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

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Detailed specifications: 2N6317, 2N6318, 2N6319, 2N632, 2N6320, 2N6321, 2N6322, 2N6323, TIP41C, 2N6325, 2N6326, 2N6327, 2N6328, 2N6329, 2N633, 2N6330, 2N6331

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