FJY4010R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJY4010R
Código: S60
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 5.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-523F
Búsqueda de reemplazo de transistor bipolar FJY4010R
FJY4010R Datasheet (PDF)
fjy4010r.pdf
July 2007FJY4010RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJY3010REquivalent CircuitC CS60 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect
fjy4012r.pdf
July 2007FJY4012RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJY3012REquivalent CircuitC CS62 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect
fjy4013r.pdf
July 2007FJY4013RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJY3013REquivalent CircuitC CS63 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4014r.pdf
July 2007FJY4014RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=47K) Complement to FJY3014REquivalent CircuitC CS64 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
fjy4011r.pdf
July 2007FJY4011RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJY3011REquivalent CircuitC CS61 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SD855A | 2SD645 | 2SD763 | DMA26403 | DDTC124ECA | MJD3055 | 2N1620-1
History: 2SD855A | 2SD645 | 2SD763 | DMA26403 | DDTC124ECA | MJD3055 | 2N1620-1
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050