FJY4011R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJY4011R
Código: S61
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 5.5
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-523F
Búsqueda de reemplazo de transistor bipolar FJY4011R
FJY4011R
Datasheet (PDF)
..1. Size:243K fairchild semi
fjy4011r.pdf
July 2007FJY4011RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22K) Complement to FJY3011REquivalent CircuitC CS61 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect
8.1. Size:243K fairchild semi
fjy4012r.pdf
July 2007FJY4012RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K) Complement to FJY3012REquivalent CircuitC CS62 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect
8.2. Size:245K fairchild semi
fjy4010r.pdf
July 2007FJY4010RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K) Complement to FJY3010REquivalent CircuitC CS60 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collect
8.3. Size:251K fairchild semi
fjy4013r.pdf
July 2007FJY4013RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K, R2=47K) Complement to FJY3013REquivalent CircuitC CS63 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
8.4. Size:251K fairchild semi
fjy4014r.pdf
July 2007FJY4014RtmPNP Epitaxial Silicon TransistorFeatures Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K, R2=47K) Complement to FJY3014REquivalent CircuitC CS64 EB EBSOT - 523FAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V
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