FJY4013R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJY4013R

Código: S63

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 68

Encapsulados: SOT-523F

 Búsqueda de reemplazo de FJY4013R

- Selecciónⓘ de transistores por parámetros

 

FJY4013R datasheet

 ..1. Size:251K  fairchild semi
 fjy4013r.pdf pdf_icon

FJY4013R

July 2007 FJY4013R tm PNP Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2K , R2=47K ) Complement to FJY3013R Equivalent Circuit C C S63 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V

 8.1. Size:243K  fairchild semi
 fjy4012r.pdf pdf_icon

FJY4013R

July 2007 FJY4012R tm PNP Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47K ) Complement to FJY3012R Equivalent Circuit C C S62 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collect

 8.2. Size:245K  fairchild semi
 fjy4010r.pdf pdf_icon

FJY4013R

July 2007 FJY4010R tm PNP Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to FJY3010R Equivalent Circuit C C S60 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collect

 8.3. Size:251K  fairchild semi
 fjy4014r.pdf pdf_icon

FJY4013R

July 2007 FJY4014R tm PNP Epitaxial Silicon Transistor Features Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=47K ) Complement to FJY3014R Equivalent Circuit C C S64 E B E B SOT - 523F Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V

MOSTRAR MÁS

Otros transistores... FJY4005R, FJY4006R, FJY4007R, FJY4008R, FJY4009R, FJY4010R, FJY4011R, FJY4012R, TIP42, FJY4014R, FJYF2906, FMB100, FMB200, FMB5551, FMB857B, FMBA06, FMBA14