FMBS5401 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMBS5401
Código: 4S1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: SSOT-6
Búsqueda de reemplazo de FMBS5401
- Selecciónⓘ de transistores por parámetros
FMBS5401 datasheet
fmbs5401.pdf
FMBS5401 NC PNP General Purpose Amplifier C1 This device is designed as a general purpose amplifier and switch for E applications requiring high voltage. B C C pin #1 SuperSOTTM-6 single Mark .4S1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Bas
fmbs549.pdf
August 2006 FMBS549 tm PNP Low Saturation Transistor Features ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. NC C1 E B C C pin #1 SuperSOTTM-6 single Mark .S1 Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emitter
fmbs5551.pdf
FMBS5551 NC NPN General Purpose Amplifier C1 This device is designed for general purpose high voltage amplifiers E and gas discharge display drivers. B C C pin #1 SuperSOTTM-6 single Mark .3S1 Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Volta
Otros transistores... FMB200, FMB5551, FMB857B, FMBA06, FMBA14, FMBA56, FMBM5401, FMBM5551, 2SC5198, FMBS549, FMBS5551, FMBSA06, FMBSA56, FPN330, FPN330A, FPN430, FPN430A
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m



