FMBS5401 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMBS5401
SMD Transistor Code: 4S1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SSOT-6
FMBS5401 Transistor Equivalent Substitute - Cross-Reference Search
FMBS5401 Datasheet (PDF)
fmbs5401.pdf
FMBS5401NCPNP General Purpose AmplifierC1 This device is designed as a general purpose amplifier and switch for Eapplications requiring high voltage.BCCpin #1SuperSOTTM-6 singleMark: .4S1PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Bas
fmbs549.pdf
August 2006FMBS549tmPNP Low Saturation TransistorFeatures ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. NC C1EBCCpin #1SuperSOTTM-6 singleMark: .S1Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCEO Collector-Emitter
fmbs5551.pdf
FMBS5551NCNPN General Purpose AmplifierC1 This device is designed for general purpose high voltage amplifiers Eand gas discharge display drivers.BCCpin #1SuperSOTTM-6 singleMark: .3S1Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 160 VVCBO Collector-Base Voltage 180 VVEBO Emitter-Base Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
