FSB660A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FSB660A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75 MHz
Capacitancia de salida (Cc): 30 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SSOT-3 SOT-23
Búsqueda de reemplazo de transistor bipolar FSB660A
FSB660A Datasheet (PDF)
fsb660a.pdf
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fsb660 a.pdf
FSB660 / FSB660ACEB SuperSOTTM-3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FSB660/FSB660A Units60 VVCEO Collector-Emitter Voltage60 VVCBO Collector-Base Voltage5 VVEBO
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
