FSB660A Specs and Replacement

Type Designator: FSB660A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SSOT-3 SOT-23

 FSB660A Substitution

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FSB660A datasheet

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FSB660A

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FSB660A

FSB660 / FSB660A C E B SuperSOTTM-3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FSB660/FSB660A Units 60 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 5 V VEBO ... See More ⇒

Detailed specifications: FPN660, FPN660A, FPNH10, FSB560, FSB560A, FSB619, FSB649, FSB660, TIP120, FSB6726, FSB749, FSBCW30, FTM3725, FZT3019, KSA1015, KSA1203, KSA1281

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