FSB660A Datasheet, Equivalent, Cross Reference Search
Type Designator: FSB660A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SSOT-3 SOT-23
FSB660A Transistor Equivalent Substitute - Cross-Reference Search
FSB660A Datasheet (PDF)
fsb660a.pdf
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fsb660 a.pdf
FSB660 / FSB660ACEB SuperSOTTM-3 (SOT-23) PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FSB660/FSB660A Units60 VVCEO Collector-Emitter Voltage60 VVCBO Collector-Base Voltage5 VVEBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
