2N633 Todos los transistores

 0.1. Size:155K  motorola
 2n6338 2n6339 2n6340 2n6341.pdf

Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrial military power amplifier and switching circuit 2N6340 applications. High Collector Emitter Sustaining Voltage 2N6341* VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 120 Vdc (Min) 2N6339 *Motorola Preferred De

 0.2. Size:190K  onsemi
 2n6338 2n6341.pdf

2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. High Collector-Emitter Sustaining Voltage - http //onsemi.com VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 25 AMPERE High DC Current Gain - hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS = 12 (Min) @ IC = 25 Adc

 0.3. Size:128K  mospec
 2n6338 2n6339 2n6340 2n6341.pdf

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 0.4. Size:11K  semelab
 2n6338x.pdf

2N6338X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.5. Size:11K  semelab
 2n6339acecc.pdf

2N6339ACECC Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe

 0.6. Size:154K  jmnic
 2n6338 2n6339 2n6340 2n6341.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436 38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base

 0.7. Size:168K  cn sptech
 2n6338 2n6339 2n6340 2n6341.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- 2N6338 CEO(SUS) = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- V )= 1.0V(Max)@ I = 10A CE(sat C APPLICATIONS Designed for use in industrial-military power ampli

 0.8. Size:185K  inchange semiconductor
 2n6338 2n6339 2n6340 2n6341.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr

 0.9. Size:219K  inchange semiconductor
 2n6330.pdf

isc Silicon PNP Power Transistor 2N6330 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -8

 0.10. Size:219K  inchange semiconductor
 2n6331.pdf

isc Silicon PNP Power Transistor 2N6331 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-100V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage