2N633 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N633
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.17 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO5
2N633 Transistor Equivalent Substitute - Cross-Reference Search
2N633 Datasheet (PDF)
2n6338 2n6339 2n6340 2n6341.pdf
Order this documentMOTOROLAby 2N6338/DSEMICONDUCTOR TECHNICAL DATAHigh-Power NPN Silicon2N6338Transistors2N6339. . . designed for use in industrial military power amplifier and switch
2n6338 2n6341.pdf
2N6338, 2N6341High-Power NPN SiliconTransistors. . . designed for use in industrial-military power amplifier andswitching circuit applications. High Collector-Emitter Sustaining Voltage -http://onsemi.comVCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N634125 AMPERE High DC Current Gain -hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS= 12 (Min) @ IC = 25 Adc
2n6338x.pdf
2N6338XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6339acecc.pdf
2N6339ACECCDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe
2n6338 2n6339 2n6340 2n6341.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436~38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base
2n6338 2n6339 2n6340 2n6341.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- 2N6338CEO(SUS)= 120V(Min)- 2N6339= 140V(Min)- 2N6340= 160V(Min)- 2N6341High Switching SpeedLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for use in industrial-military power ampli
2n6338 2n6339 2n6340 2n6341.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr
2n6330.pdf
isc Silicon PNP Power Transistor 2N6330DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -8
2n6331.pdf
isc Silicon PNP Power Transistor 2N6331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
