All Transistors. 2N633 Datasheet

 

2N633 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N633
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.17 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO5

 2N633 Transistor Equivalent Substitute - Cross-Reference Search

   

2N633 Datasheet (PDF)

 0.1. Size:155K  motorola
2n6338 2n6339 2n6340 2n6341.pdf

2N633
2N633

Order this documentMOTOROLAby 2N6338/DSEMICONDUCTOR TECHNICAL DATAHigh-Power NPN Silicon2N6338Transistors2N6339. . . designed for use in industrialmilitary power amplifier and switching circuit2N6340applications. High CollectorEmitter Sustaining Voltage 2N6341*VCEO(sus) = 100 Vdc (Min) 2N6338VCEO(sus) = 120 Vdc (Min) 2N6339*Motorola Preferred De

 0.2. Size:190K  onsemi
2n6338 2n6341.pdf

2N633
2N633

2N6338, 2N6341High-Power NPN SiliconTransistors. . . designed for use in industrial-military power amplifier andswitching circuit applications. High Collector-Emitter Sustaining Voltage -http://onsemi.comVCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N634125 AMPERE High DC Current Gain -hFE = 30 - 120 @ IC = 10 Adc POWER TRANSISTORS= 12 (Min) @ IC = 25 Adc

 0.3. Size:128K  mospec
2n6338 2n6339 2n6340 2n6341.pdf

2N633
2N633

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 0.4. Size:11K  semelab
2n6338x.pdf

2N633

2N6338XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 0.5. Size:11K  semelab
2n6339acecc.pdf

2N633

2N6339ACECCDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processe

 0.6. Size:154K  jmnic
2n6338 2n6339 2n6340 2n6341.pdf

2N633
2N633

JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6436~38 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base

 0.7. Size:168K  cn sptech
2n6338 2n6339 2n6340 2n6341.pdf

2N633
2N633

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N6338/6339/6340/6341DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)- 2N6338CEO(SUS)= 120V(Min)- 2N6339= 140V(Min)- 2N6340= 160V(Min)- 2N6341High Switching SpeedLow Saturation Voltage-: V )= 1.0V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for use in industrial-military power ampli

 0.8. Size:185K  inchange semiconductor
2n6338 2n6339 2n6340 2n6341.pdf

2N633
2N633

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 High Switching Speed Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS Designed for use in industr

 0.9. Size:219K  inchange semiconductor
2n6330.pdf

2N633
2N633

isc Silicon PNP Power Transistor 2N6330DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -8

 0.10. Size:219K  inchange semiconductor
2n6331.pdf

2N633
2N633

isc Silicon PNP Power Transistor 2N6331DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage

Datasheet: 2N6322 , 2N6323 , 2N6324 , 2N6325 , 2N6326 , 2N6327 , 2N6328 , 2N6329 , 2N3904 , 2N6330 , 2N6331 , 2N6338 , 2N6338A , 2N6339 , 2N6339A , 2N6339X , 2N634 .

 

 
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