KST3906 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KST3906

Código: 2A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-23

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KST3906 datasheet

 ..1. Size:107K  fairchild semi
 kst3906.pdf pdf_icon

KST3906

September 2010 KST3906 PNP Epitaxial Silicon Transistor Features General Purpose Transistor 3 Marking 2 2A SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collec

 ..2. Size:47K  samsung
 kst3906.pdf pdf_icon

KST3906

KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRI

 ..3. Size:222K  onsemi
 kst3906.pdf pdf_icon

KST3906

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:55K  fairchild semi
 kst3904.pdf pdf_icon

KST3906

KST3904 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temp

MOSTRAR MÁS

Otros transistores... KSC2330A, KSC2784, KSC2881, KSC2883, KSC5019, KSC5042F, KSP5179, KSP94, S8050, KST4125, KST5401, KST5551, MAT02, MMBT2222AK, PN2369A, MMBT2369A, MMBT2907AK