TN6714A Todos los transistores

TN6714A NZT6714 C E C B TO-226 C SOT-223 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V V

TN6718A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. Sourced from Process 39. See TN6717A for characteristics. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units 100 V VCEO Collector-Emitter Voltage 100 V VCBO Collector-Ba

TN6717A NZT6717 C E C B TO-226 C B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VE

TN6716A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter Value Units 60 V VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base

Discrete POWER & Signal Technologies TN6719A TO-226 C B E NPN High Voltage Amplifier This device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 300 V V Collector-Base Voltage 300 V CBO VEBO Emitter-Ba

TN6715A NZT6715 C E C B TO-226 C B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 50 V VE

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Spec. No. C823A3 Issued Date 2006.10.16 CYStech Electronics Corp. Revised Date Page No. 1/5 NPN Epitaxial Planar Transistor BTN6718A3 Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High collector current,

Spec. No. C319D3 Issued Date 2008.05.13 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor BTN6718D3 Features High breakdown voltage, BV 100V CEO Large continuous collector current capability, I =1A(DC) C(MAX) Low collector saturation voltage Pb-free package Symbol Outline BTN6718D3 TO-126ML